BSP89,115 NXP Semiconductors, BSP89,115 Datasheet

MOSFET N-CH 240V 375MA SOT223

BSP89,115

Manufacturer Part Number
BSP89,115
Description
MOSFET N-CH 240V 375MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP89115.pdf (8 pages)

Specifications of BSP89,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 340mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
375mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.375 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1769-2
934018750115
BSP89 T/R
Product specification
Supersedes data of 1997 Jun 23
book, halfpage
DATA SHEET
BSP89
N-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
M3D087
2001 May 18

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BSP89,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package, intended for use as a surface-mounted device in line ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient; note 1 th j-a Note 1. Transistor mounted on an epoxy printed circuit board 1.5 mm, mounting pad ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2 handbook, halfpage P tot (W) 1.6 1.2 0.8 0 100 Fig.2 Power derating curve. handbook, halfpage INPUT OUTPUT t on Fig.4 Input and output ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 May 18 NOTES 7 Product specification BSP89 ...

Page 8

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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