RSS065N03TB Rohm Semiconductor, RSS065N03TB Datasheet - Page 3

• Manufacturer Part Number: RSS065N03TB
• Description: MOSFET N-CH 30V 6.5A 8-SOIC
• Manufacturer: Rohm Semiconductor

Specifications of RSS065N03TB

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RSS065N03TB; RSS065N03TBTR

Transistors
Electrical characteristic curves
0.001
1000
0.01
100
10000
0.1
10
1000
10
0.01
100
1
0.0
Fig.4 Typical Transfer Characteristics
10
1
0.1
Fig.1 Typical Capacitance
Ta 25 C
f 1MHz
V
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
CE
Ta 125 C
Ta 75 C
Ta 25 C
Ta
0.5 1.0
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Fig.7 Static Drain-Source
0V
vs. Drain-Source Voltage
25 C
0.1
DRAIN CURRENT : I
25 C
On-State Resistance
vs. Drain Current ( )
1.5
2.0
1
1
2.5
10
3.0
V
Pulsed
D
DS
V
Pulsed
(A)
GS
GS
DS
3.5
10V
C
C
C
(V)
(V)
10V
iss
oss
rss
100
4.0
10
10000
1000
10000
100
1000
10
300
250
200
150
100
100
1
0.01
50
10
1
0.1
Fig.2 Switching Characteristics
0
0
Fig.5 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
GATE-SOURCE VOLTAGE : V
Fig.8 Static Drain-Source
t
t
d(off)
d(on)
2
t
t
25 C
DRAIN CURRENT : I
f
r
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current ( )
0.1
I
D
I
D
6
3.25A
6.5A
1
8
10
1
D
D
12
Ta 25 C
V
V
R
Pulsed
(A)
V
Pulsed
(A)
DD
GS
G
Ta 25 C
Pulsed
GS
10
GS
15V
10V
14
4.5V
(V)
10
10
16
0.01
100
10000
0.1
1000
10
100
1
10
8
7
6
5
4
3
2
1
0
0.0
1
Fig.3 Dynamic Input Characteristics
0.1
0
Ta 25 C
V
I
R
Pulsed
SOURCE-DRAIN VOLTAGE : V
D
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Ta 125 C
Ta 75 C
Ta 25 C
Ta
DD
G
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
TOTAL GATE CHARGE : Qg (nC)
6.5A
10
1
15V
25 C
25 C
DRAIN CURRENT : I
Source-Drain Voltage
On-State Resistance
vs. Drain Current ( )
2
0.5
RSS065N03
3
1
4
1.0
5
D
(A)
V
Pulsed
V
Pulsed
GS
GS
SD
6
(V)
4V
0V
3/3
1.5
10
7