RSS065N03TB Rohm Semiconductor, RSS065N03TB Datasheet

MOSFET N-CH 30V 6.5A 8-SOIC

RSS065N03TB

Manufacturer Part Number
RSS065N03TB
Description
MOSFET N-CH 30V 6.5A 8-SOIC
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RSS065N03TB

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
6.1nC @ 5V
Input Capacitance (ciss) @ Vds
430pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RSS065N03TB
RSS065N03TBTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RSS065N03TB
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Switching (30V, 6.5A)
RSS065N03
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC / DC converter.
Silicon N-channel
MOS FET
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
Channel to ambient
1 Pw 10 s, Duty cycle 1%
2 Mounted on a ceramic board.
Mounted on a ceramic board.
Applications
Features
Structure
Absolute maximum ratings (Ta=25°C)
Thermal resistance (Ta=25°C)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
DP
I
Rth (ch-a)
SP
D
S
D
Symbol
55 to 150
Limits
150
1.6
6.4
30
6.5
20
26
2
Limits
62.5
Unit
W
V
V
A
A
A
A
C
C
External dimensions (Unit : mm)
ROHM:SOP8
C / W
Unit
1
1
2
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Equivalent circuit
1 ESD PROTECTION DIODE
2 BODY DIODE
(8)
(1)
1.27
5.0 0.2
2
(7)
(2)
0.1
0.4 0.1
Each lead has same dimensions
(6)
(3)
1
RSS065N03
0.2 0.1
(5)
(4)
(8) (7) (6) (5)
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
1/3

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RSS065N03TB Summary of contents

Page 1

Transistors Switching (30V, 6.5A) RSS065N03 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching converter. Structure Silicon N-channel MOS FET Absolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-starte R DS (on) resistance Forward transfer admittance Y ...

Page 3

Transistors Electrical characteristic curves 1000 C iss 100 C oss C rss 1MHz 0.01 0 100 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 V ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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