RTR020P02TL Rohm Semiconductor, RTR020P02TL Datasheet - Page 4

• Manufacturer Part Number: RTR020P02TL
• Description: MOSFET P-CH 20V 2A TSMT3
• Manufacturer: Rohm Semiconductor

Specifications of RTR020P02TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 4.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TSMT3
• 20v 2a Tsmt3: Transistor Polarity
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: -12V
• Operating Temperature: RoHS Compliant
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.135 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RTR020P02TLTR

Transistors
Measurement circuits
I
G (Const.)
Fig.10 Switching Time Test Circuit
Fig.12 Gate Charge Test Circuit
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
D
I
D
R
V
R
L
V
DD
L
DD
V
V
DS
DS
V
V
Fig.11 Switching Time Waveforms
GS
DS
V
t
d(on)
GS
V
Fig.13 Gate Charge Waveform
G
Q
gs
10%
t
on
10%
t
90%
r
Q
gd
Q
g
t
d(off)
RTR020P02
t
Charge
90%
off
t
10%
90%
r
4/4