RTR020P02TL Rohm Semiconductor, RTR020P02TL Datasheet - Page 3

• Manufacturer Part Number: RTR020P02TL
• Description: MOSFET P-CH 20V 2A TSMT3
• Manufacturer: Rohm Semiconductor

Specifications of RTR020P02TL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 4.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: TSMT3
• 20v 2a Tsmt3: Transistor Polarity
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 135mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Voltage Vgs Max: -12V
• Operating Temperature: RoHS Compliant
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.135 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RTR020P02TLTR

Transistors
Electrical characteristic curves
0.001
0.01
10000
0.1
1000
1000
10
100
Fig.4 Static Drain-Source On-State
100
1
10
0.5
Fig.1 Typical Transfer Characteristics
10
0.1
0.01
GATE-SOURCE VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.7 Typical Capacitance
DRAIN-SOURCE VOLTAGE : −V
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : −I
1.0
vs. Drain-Source Voltage
0.1
1.5
1
1
2.0
V
Pulsed
V
Pulsed
10
D
DS
GS
Ta=25°C
f=1MHz
V
(A)
= −10V
GS
= −4.5V
GS
C
C
C
=0V
DS
iss
oss
rss
(V)
(V)
2.5
10
100
1000
1000
100
10000
100
Fig.2 Static Drain-Source On-State
1000
10
Fig.5 Static Drain-Source On-State
1
0.01
100
0.1
10
1
0.01
V
V
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.8 Switching Characteristics
GS
GS
GS
Resistance vs. Drain Current
= −2.5V
= −4.0V
= −4.5V
Resistance vs. Drain Current
DRAIN CURRENT : −I
DRAIN CURRENT : −I
DRAIN CURRENT : −I
t
d (off)
t
r
t
0.1
f
0.1
t
d (on)
1
1
1
D
V
Pulsed
D
GS
Ta=25°C
Pulsed
(A)
Ta=25°C
V
V
R
Pulsed
D
(A)
= −2.5V
DD
GS
G
(A)
=10Ω
= −15V
= −4.5V
10
10
10
1000
100
0.01
10
Fig.3 Static Drain-Source On-State
0.1
10
0.1
1
8
7
6
5
4
3
2
1
0
0
Fig.9 Dynamic Input Characteristics
0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
SOURCE-DRAIN VOLTAGE : −V
Fig.6 Reverse Drain Current
Resistance vs. Drain Current
TOTAL GATE CHARGE : Qg (nC)
DRAIN CURRENT : −I
1
0.5
vs.Source-Drain Voltage
2
RTR020P02
1
1.0
3
4
V
Pulsed
D
1.5
GS
Ta=25°C
V
I
R
Pulsed
(A)
D
DD
G
= −2.0A
= −10V
V
Pulsed
=10Ω
= −15V
5
GS
SD
=0V
(V)
3/4
10
2.0
6