RTR020P02TL Rohm Semiconductor, RTR020P02TL Datasheet - Page 3
![MOSFET P-CH 20V 2A TSMT3](/photos/5/48/54822/rtr020p02tl_sml.jpg)
RTR020P02TL
Manufacturer Part Number
RTR020P02TL
Description
MOSFET P-CH 20V 2A TSMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.RTR020P02TL.pdf
(5 pages)
Specifications of RTR020P02TL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
4.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
430pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TSMT3
20v 2a Tsmt3
Transistor Polarity
Continuous Drain Current Id
2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
-12V
Operating Temperature
RoHS Compliant
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.135 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RTR020P02TLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RTR020P02TL
Manufacturer:
SANKEN
Quantity:
11 450
Company:
Part Number:
RTR020P02TL
Manufacturer:
ROHM
Quantity:
232
Company:
Part Number:
RTR020P02TL
Manufacturer:
ROHM
Quantity:
65 000
Part Number:
RTR020P02TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Electrical characteristic curves
0.001
0.01
10000
0.1
1000
1000
10
100
Fig.4 Static Drain-Source On-State
100
1
10
0.5
Fig.1 Typical Transfer Characteristics
10
0.1
0.01
GATE-SOURCE VOLTAGE : −V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.7 Typical Capacitance
DRAIN-SOURCE VOLTAGE : −V
Resistance vs. Drain Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : −I
1.0
vs. Drain-Source Voltage
0.1
1.5
1
1
2.0
V
Pulsed
V
Pulsed
10
D
DS
GS
Ta=25°C
f=1MHz
V
(A)
= −10V
GS
= −4.5V
GS
C
C
C
=0V
DS
iss
oss
rss
(V)
(V)
2.5
10
100
1000
1000
100
10000
100
Fig.2 Static Drain-Source On-State
1000
10
Fig.5 Static Drain-Source On-State
1
0.01
100
0.1
10
1
0.01
V
V
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.8 Switching Characteristics
GS
GS
GS
Resistance vs. Drain Current
= −2.5V
= −4.0V
= −4.5V
Resistance vs. Drain Current
DRAIN CURRENT : −I
DRAIN CURRENT : −I
DRAIN CURRENT : −I
t
d (off)
t
r
t
0.1
f
0.1
t
d (on)
1
1
1
D
V
Pulsed
D
GS
Ta=25°C
Pulsed
(A)
Ta=25°C
V
V
R
Pulsed
D
(A)
= −2.5V
DD
GS
G
(A)
=10Ω
= −15V
= −4.5V
10
10
10
1000
100
0.01
10
Fig.3 Static Drain-Source On-State
0.1
10
0.1
1
8
7
6
5
4
3
2
1
0
0
Fig.9 Dynamic Input Characteristics
0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
SOURCE-DRAIN VOLTAGE : −V
Fig.6 Reverse Drain Current
Resistance vs. Drain Current
TOTAL GATE CHARGE : Qg (nC)
DRAIN CURRENT : −I
1
0.5
vs.Source-Drain Voltage
2
RTR020P02
1
1.0
3
4
V
Pulsed
D
1.5
GS
Ta=25°C
V
I
R
Pulsed
(A)
D
DD
G
= −2.0A
= −10V
V
Pulsed
=10Ω
= −15V
5
GS
SD
=0V
(V)
3/4
10
2.0
6