RK7002AT116 Rohm Semiconductor, RK7002AT116 Datasheet - Page 3

• Manufacturer Part Number: RK7002AT116
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: Rohm Semiconductor

Specifications of RK7002AT116

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 33pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RK7002AT116; RK7002AT116TR

Transistors
Fig.7 Static drain-source on-state
0.001
Fig.4 Static drain-source on-state
0.01
Fig.10 Forward transfer admittance
0.1
0.001
1.0
0.1
1
10
2.0
1.5
1.0
0.5
0.0
0.01
resistance vs. channel temperature
−50
resistance vs. drain current ( Ι )
Ta=−25°C
CHANNEL TEMPERATURE : Tch (°C)
vs. drain current
−25
Ta=125°C
DRAIN CURRENT : I
25°C
DRAIN CURRENT : I
0
0.01
−25°C
75°C
25°C
I
D
=300mA
25
Ta=75°C
0.1
125°C
50
0.1
150mA
75 100 125 150
D
D
(A)
(A)
V
Pulsed
V
Pulsed
GS
GS
V
Pulsed
=10V
= 10V
GS
=10V
1
1.0
Fig.5 Static drain-source on-state
100
0.001
10
0.01
1.0
0.1
0.01
Fig.11 Typical capacitance
1
10
0.1
0.01
1
Ta=25°C
V
0.0
f=1MHz
Fig.8 Reverse drain current vs.
GS
resistance vs. drain current ( ΙΙ )
V
Pulsed
DRAIN-SOURCE VOLTAGE : V
=0V
GS
SOURCE-DRAIN VOLTAGE : V
= 0V
Ta=125°C
vs. drain-source voltage
0.2
0.1
Ta=125°C
DRAIN CURRENT : I
−25°C
source-drain voltage ( Ι )
75°C
25°C
−25°C
75°C
25°C
0.4
1
0.1
0.6
0.8
10
D
C
(A)
rss
DS
V
Pulsed
1.0
(V)
SD
C
GS
C
iss
(V)
oss
= 4V
100
1.0
1.2
Fig.6 Static drain-source on-state
1000
100
0.001
0.01
10
0.1
1
10
1
Fig.12 Switching characteristics
resistance vs. gate-source voltage
7
6
5
4
3
2
1
0
1
0.0
0
Fig.9 Reverse drain current vs.
150mA
SOURCE-DRAIN VOLTAGE : V
V
GATE-SOURCE VOLTAGE : V
GS
0.2
=10V
DRAIN CURRENT : I
(See Figures 13 and 14 for
source-drain voltage ( ΙΙ )
the measurement circuit
and resultant waveforms)
I
D
=300mA
5
10
0.4
t
d (on)
0.6
10
t
t
r
RK7002A
d (off)
t
f
100
0.8
D
0V
(A)
15
Ta=25°C
V
V
R
Pulsed
Ta=25°C
Pulsed
DD
GS
G
GS
Ta=25°C
Pulsed
=10Ω
1.0
SD
=30V
=10V
(V)
(V)
1000
1.2
20