RK7002AT116 Rohm Semiconductor, RK7002AT116 Datasheet - Page 2

• Manufacturer Part Number: RK7002AT116
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: Rohm Semiconductor

Specifications of RK7002AT116

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 33pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RK7002AT116; RK7002AT116TR

Transistors
! ! ! ! Electrical characteristics (Ta=25°C)
! ! ! ! Packaging specifications
! ! ! ! Electrical characteristic curves
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Type
RK7002A
∗1 P
∗2 Pulsed
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig.1 Typical output characteristics
0.0
W
≤300µs, Duty cycle≤1%
DRAIN-SOURCE VOLTAGE : V
0.5
8V
10V
Parameter
Package
Code
Basic ordering unit (pieces)
1.0
6V
1.5
2.0
4V
VGS=3V
Ta=25°C
Pulsed
2.5
DS
3.5V
(V)
R
V
Symbol
l Y
V
t
t
DS (on)
Q
Q
(BR) DSS
3.0
d (on)
d (off)
Q
C
I
I
C
GS (th)
C
t
t
GSS
DSS
fs
r
f
gs
gd
oss
∗
g
rss
∗
iss
∗
2
2
∗
∗
l
2
∗
∗
∗
2
2
∗
1
2
2
1
0.001
Fig.2 Typical transfer characteristics
Min.
Taping
200
0.01
60
T116
3000
0.1
−
−
1
−
−
−
−
−
−
−
−
−
−
−
−
1
0.0
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
= 10V
0.5
Typ.
0.7
1.1
0.6
0.5
33
14
13
80
−
−
−
−
−
9
6
5
3
Ta=−25°C
1.0
125°C
25°C
75°C
1.5
Max.
±10
2.5
1.0
1.5
−
1
−
−
−
−
−
−
−
−
6
−
−
2.0
2.5
Unit
mS
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
3.0
GS
3.5
(V)
I
I
V
V
I
V
V
V
V
f=1MHz
I
V
R
R
V
V
I
D
D
D
D
D
DS
GS
DS
DS
=300mA, V
=300mA, V
DS
GS
GS
L
GS
DD
GS
=10µA, V
=150mA, V
=200mA
=200Ω
4.0
=10V, I
=10V
=±20V, V
=60V, V
=10V, I
=0V
=10V
=10V
=10Ω
30V
Test Conditions
D
D
GS
GS
=300mA
=1mA
GS
GS
DS
DD
=0V
2.5
2.0
1.5
1.0
=0V
0.5
0.0
=10V
=4V
=0V
−50 −25
30V
Fig.3 Gate threshold voltage
CHANNEL TEMPERATURE : Tch
vs. channel temperature
0
25
50
RK7002A
75
100 125
V
I
Pulsed
D
DS
=1mA
= 10V
(°C)
150