BSS123,215 NXP Semiconductors, BSS123,215 Datasheet
BSS123,215
Manufacturer Part Number
BSS123,215
Description
MOSFET N-CH 100V 150MA SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Type
Power MOSFETr
Datasheet
1.BSS123215.pdf
(4 pages)
Specifications of BSS123,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 120mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.15 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
6Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4873-2
933946340215
BSS123 T/R
BSS123 T/R
BSS123,215
933946340215
BSS123 T/R
BSS123 T/R
BSS123,215
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSS123,215
Manufacturer:
NXP Semiconductors
Quantity:
9 400
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting
package
GENERAL DESCRIPTION
N-channel
field-effect transistor in a plastic
envelope
technology.
Applications:-
• Relay driver
• High-speed line driver
• Telephone ringer
The BSS123 is supplied in the
SOT23
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 2000
N-channel TrenchMOS
Logic level FET
SYMBOL PARAMETER
V
V
V
I
I
P
T
SYMBOL PARAMETER
R
D
DM
j
DSS
DGR
GS
D
th j-a
, T
stg
subminiature
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Thermal resistance junction
to ambient
enhancement
using
’trench’
surface
mode
transistor
PINNING
SYMBOL
PIN
1
2
3
CONDITIONS
T
T
T
T
T
CONDITIONS
surface mounted on FR4 board
j
j
a
a
a
= 25 ˚C to 150˚C
= 25 ˚C to 150˚C; R
= 25 ˚C
= 25 ˚C
= 25 ˚C
gate
source
drain
g
DESCRIPTION
1
d
s
GS
= 20 k
QUICK REFERENCE DATA
SOT23
R
DS(ON)
TYP.
MIN.
- 55
500
V
I
D
-
-
-
-
-
-
DSS
= 150 mA
6
Product specification
1
= 100 V
(V
3
MAX.
MAX.
0.25
100
100
150
600
150
GS
-
20
Top view
2
BSS123
= 10 V)
Rev 1.000
UNIT
UNIT
K/W
mA
mA
˚C
W
V
V
V
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BSS123,215 Summary of contents
Page 1
Philips Semiconductors N-channel TrenchMOS Logic level FET FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • ...
Page 2
Philips Semiconductors N-channel TrenchMOS Logic level FET ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) R Drain-source on-state DS(ON) resistance g Forward transconductance fs I Zero gate ...
Page 3
Philips Semiconductors N-channel TrenchMOS Logic level FET MECHANICAL DATA Plastic surface mounted package; 3 leads 1 DIMENSIONS (mm are the original dimensions UNIT A max. 1.1 0.48 mm 0.1 0.9 0.38 OUTLINE VERSION SOT23 Notes 1. This product ...
Page 4
Philips Semiconductors N-channel TrenchMOS Logic level FET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...