IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 7

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF

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Fig 16a. Gate Charge Test Circuit
Fig 15a. Unclamped Inductive Test Circuit
R G
20V
12V
V DS
V
GS
Same Type as D.U.T.
t p
Current Regulator
.2µF
I AS
D.U.T
50KΩ
3mA
Current Sampling Resistors
0.01 Ω
L
.3µF
I
G
D.U.T.
750
600
450
300
150
I
D
0
15V
25
Fig 14. Maximum Avalanche Energy
+
DRIVER
-
V
Starting T , Junction Temperature
DS
+
- V DD
50
Vs. Drain Current
A
J
75
Fig 15b. Unclamped Inductive Waveforms
Fig 16b. Basic Gate Charge Waveform
100
I
AS
V
TOP
BOTTOM
GS
V
V
G
125
Q
( C)
°
GS
t p
I D
10A
15A
23A
150
Charge
Q
Q
V
GD
G
(BR)DSS
7