IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet

MOSFET N-CH 500V 23A TO-247AC

IRFP23N50LPBF

Manufacturer Part Number
IRFP23N50LPBF
Description
MOSFET N-CH 500V 23A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP23N50LPBF

Transistor Polarity
N-Channel
Continuous Drain Current Id
23A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
235mohm
Rds(on) Test Voltage Vgs
10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
235 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
370W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.235 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
370000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Voltage Vgs Max
30V
Operating Temperature
RoHS Compliant
Leaded Process Compatible
Yes
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP23N50LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP23N50LPBF
Manufacturer:
APT
Quantity:
10 000
Part Number:
IRFP23N50LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFP23N50LPBF
Quantity:
3 675
Company:
Part Number:
IRFP23N50LPBF
Quantity:
70 000
Company:
Part Number:
IRFP23N50LPBF
Quantity:
5 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 23 A, dI/dt  650 A/μs, V
TO-247AC
()
J
= 25 °C, L = 1.5 mH, R
G
D
a
S
c
a
a
b
DD
V
GS
 V
g
= 10 V
= 25 , I
DS
G
, T
N-Channel MOSFET
J
Single
 150 °C.
500
150
44
72
AS
This datasheet is subject to change without notice.
= 23 A (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.190
V
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFP23N50LPbF
SiHFP23N50L-E3
IRFP23N50L
SiHFP23N50L
= 100 °C
= 25 °C
FEATURES
• Superfast Body Diode Eliminates the Need for
• Lower Gate Charge Results in Simpler Drive
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
External Diodes in ZVS Applications
Requirements
Immunity
IRFP23N50L, SiHFP23N50L
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
- 55 to + 150
LIMIT
300
± 30
500
410
370
2.9
1.1
23
15
92
23
37
21
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
RoHS*
UNIT
W/°C
N · m
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP23N50LPBF Summary of contents

Page 1

... Higher Gate Voltage Threshold Offers Improved Noise Single Immunity D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications S TO-247AC IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFP23N50L, SiHFP23N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix ° 150 ° µs PULSE WIDTH T = 150°C J 6.0 11.0 16 Gate-to-Source Voltage ( ...

Page 4

... IRFP23N50L, SiHFP23N50L Vishay Siliconix 100000 MHZ iss rss oss ds gd 10000 Ciss 1000 Coss 100 Crss 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 400 0 100 200 300 Drain-to-Source Voltage (V) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP23N50L, SiHFP23N50L Fig. 11a - Switching Time Test Circuit 1.5 2 Fig. 11b - Switching Time Waveforms 125 150 (°C) 0.001 0. Rectangular Pulse Duration (sec) 1 This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRFP23N50L, SiHFP23N50L Vishay Siliconix 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 Temperature (°C) J Fig Threshold Voltage vs. Temperature 750 TOP BOTTOM 23A 600 450 300 150 100 Starting T , Junction Temperature Fig Maximum Avalanche Energy s. Drain Current D.U 0.01 Ω Fig. 15a - Unclamped Inductive Test Circuit www ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91209. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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