IRF830 Vishay, IRF830 Datasheet - Page 6

• Manufacturer Part Number: IRF830
• Description: MOSFET N-CH 500V 4.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF830

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830; IRF830IR

IRF830, SiHF830
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
I
GD
G
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91063_12c
This datasheet is subject to change without notice.
500
400
300
200
100
600
0
+
-
25
V
V
DD
DD
= 50 V
Starting T
50
A
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
2.0 A
2.8 A
4.5 A
Current regulator
I
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0506-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91063
D.U.T.
V
I
D
(BR)DSS
+
-
V
V
DD
DS