SIHG22N60S-E3 Vishay, SIHG22N60S-E3 Datasheet
SIHG22N60S-E3
Specifications of SIHG22N60S-E3
Available stocks
Related parts for SIHG22N60S-E3
SIHG22N60S-E3 Summary of contents
Page 1
... High Peak Current Capability • dV/dt Ruggedness D • Effective C • Improved Transconductance • Improved t G • Improved Gate Charge • High Power Dissipation Capability • Compliant to RoHS Directive 2002/95/EC S N-Channel MOSFET TO-247AC SiHG22N60S-E3 SiHG22N60S-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 °C ...
Page 2
... SiHG22N60S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance a Forward Transconductance Dynamic Input Capacitance ...
Page 3
... V GS Top 2 1 Bottom 150 ° 150 °C Fig Normalized On-Resistance vs. Temperature J This datasheet is subject to change without notice. SiHG22N60S Vishay Siliconix ° 150 ° Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 100 120 140 160 180 T Junction Temperature (° www.vishay.com www.vishay.com/doc?91000 3 ...
Page 4
... SiHG22N60S Vishay Siliconix 100 000 MHz iss rss 000 oss ds oss 1000 100 C rss Drain-to-Source Voltage ( Fig Typical Capacitance vs. Drain-to-Source Voltage 12 480 10 300 120 V DS 8.0 6.0 4.0 2.0 0 Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1000 • ...
Page 5
... Fig Drain-to-Source Breakdown Voltage - Square Wave Pulse Duration (s) Vary t to obtain p required Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. SiHG22N60S Vishay Siliconix 100 120 140 160 180 T Junction Temperature (° 0 D.U 0.01 Ω ...
Page 6
... SiHG22N60S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform Rever e recovery current Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
Page 7
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...