IRFZ48RSPBF Vishay, IRFZ48RSPBF Datasheet - Page 4

• Manufacturer Part Number: IRFZ48RSPBF
• Description: MOSFET N-CH 60V 50A D2PAK
• Manufacturer: Vishay

Specifications of IRFZ48RSPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFZ48RSPBF

IRFZ48RS/LPbF
Document Number: 91296
1000
100
10
1
0.1
T
T
Single Pulse
C
J
= 25 C °
= 175 C
OPERATION IN THIS AREA LIMITED
V
DS
°
, Drain-to-Source Voltage (V)
1
BY R
10
DS(on)
www.vishay.com
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