IRFI9540GPBF Vishay, IRFI9540GPBF Datasheet - Page 7

• Manufacturer Part Number: IRFI9540GPBF
• Description: MOSFET P-CH 100V 11A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9540GPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fall Time: 86 ns
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFI9540GPBF

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91164.
Document Number: 91164
S09-0011-Rev. A, 19-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
R
-
Compliment N-Channel of D.U.T. for driver
G
D.U.T.
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• I
• D.U.T. - device under test
Fig. 14 - For P-Channel
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
IRFI9540G, SiHFI9540G
V
V
I
SD
GS
DD
= - 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7