IRF740ALPBF Vishay, IRF740ALPBF Datasheet - Page 6

• Manufacturer Part Number: IRF740ALPBF
• Description: MOSFET N-CH 400V 10A TO-262
• Manufacturer: Vishay

Specifications of IRF740ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF740ALPBF

IRF740AS, IRF740AL, SiHF740AS, SiHF740AL
Vishay Siliconix
www.vishay.com
6
91052_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1400
1200
1000
800
600
400
200
0
V
Fig. 13a - Basic Gate Charge Waveform
25
GS
V
G
Starting T
Q
GS
50
J
, Junction Temperature (°C)
Charge
Q
75
Q
GD
G
100
Top
Bottom
125
4.5 A
6.3 A
10 A
I
D
150
91052_12d
500
580
560
540
520
480
Fig. 12d - Typlical Drain-to-Source Voltage
1.0
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
2.0
Current regulator
vs. Avalanche Current
0.2 µF
3.0
I
AV
, Avalanche Current (A)
Current sampling resistors
3 mA
50 kΩ
4.0
0.3 µF
5.0
I
G
6.0
S-83029-Rev. A, 19-Jan-09
Document Number: 91052
D.U.T.
7.0
I
D
8.0
+
-
V
DS
9.0
10.0