IRF740ALPBF Vishay, IRF740ALPBF Datasheet

MOSFET N-CH 400V 10A TO-262

IRF740ALPBF

Manufacturer Part Number
IRF740ALPBF
Description
MOSFET N-CH 400V 10A TO-262
Manufacturer
Vishay
Datasheets

Specifications of IRF740ALPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
10A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF740ALPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF740ALPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF740ALPBF
Quantity:
10 000
Company:
Part Number:
IRF740ALPBF
Quantity:
70 000
Document Number: 91052
l
l
l
l
l
l
l
l
l
l
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@T
@T
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss specified (
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Single transistor Flyback Xfmr. Reset
Single Transistor Forward Xfmr. Reset
( Both for US Line Input only )
C
C
A
C

= 25°C
= 25°C
= 100°C
= 25°C
through … are on page 10
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
SMPS MOSFET
GS
GS
@ 10V†
@ 10V†
V
400V
DSS
300 (1.6mm from case )
D Pak
2
HEXFET
-55 to + 150
Rds(on) max
Max.
125
± 30
6.3
3.1
1.0
5.9
10
40
0.55Ω
®
Power MOSFET
TO-262
www.vishay.com
Units
W/°C
10A
V/ns
°C
I
W
A
V
D
1

Related parts for IRF740ALPBF

IRF740ALPBF Summary of contents

Page 1

... Document Number: 91052 SMPS MOSFET HEXFET V Rds(on) max DSS 400V 2 D Pak @ 10V† 10V† 150 300 (1.6mm from case ) ® Power MOSFET I D 0.55Ω 10A TO-262 Max. Units 10 6 3.1 W 125 1.0 W/°C ± 5.9 V/ns °C www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA† 6.0A „ 250µ 0V 125° Conditions = 6.0A† D „† = 1.0V, ƒ = 1.0MHz DS = 320V, ƒ = 1.0MHz 320V …† DS Max. Units 630 12.5 mJ Max. Units 1.0 °C/W 40 Conditions 10A „ 10A www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS 10A V = 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 10A V = 320V 200V 80V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° ° = 150 C 10ms 100 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 40 1000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91052 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0 www.vishay.com 5 ...

Page 6

... Fig 12c. Maximum Avalanche Energy 580 560 540 520 500 + 480 1.0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 4.5A 6.3A BOTTOM 10A 50 75 100 125 ° J Vs. Drain Current 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9 Avalanche Current ( A) Vs. Avalanche Current www.vishay.com 150 10.0 6 ...

Page 7

... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Document Number: 91052 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS + - V =10V www.vishay.com 7 ...

Page 8

... Dimensions are shown in millimeters (inches "L " N ote: "P " bly lin tion in dicates "L ead-F r ee" Document Number: 91052 IGN www.vishay.com 8 ...

Page 9

... OR Document Number: 91052 PAR T NUMB ER INT ER NAT IONAL LOGO DAT E CODE 1997 CODE L INE C PAR T NUMB ER INT E R NAT IONAL LOGO DAT E CODE IGNAT EAD MBL Y PR ODUCT (OPT IONAL ) L OT CODE 1997 CODE www.vishay.com 9 ...

Page 10

... Data and specifications subject to change without notice. 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) 4.72 (.136) 4.52 (.178) 27.40 (1.079) 23.90 (.941) 4 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 4 24.40 (.961) 3 DSS TAC Fax: (310) 252-7903 07/04 www.vishay.com 10 ...

Page 11

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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