IRF644SPBF Vishay, IRF644SPBF Datasheet - Page 5

MOSFET N-CH 250V 14A D2PAK

IRF644SPBF

Manufacturer Part Number
IRF644SPBF
Description
MOSFET N-CH 250V 14A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRF644SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
14A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF644SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF644SPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91040
S10-2695-Rev. B, 29-Nov-10
91040_07
91040_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
10
0
-1
2
1
1
3
5
2
5
2
5
2
0.5
1
Fig. 8 - Maximum Safe Operating Area
2
V
V
0.6
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
0.7
10
T
T
Single Pulse
150
C
J
by R
= 150 °C
= 25 °C
2
°
0.8
C
DS(on)
5
25
10
°
0.9
C
2
2
V
1.0
100
1
10
GS
10
ms
= 0 V
µs
ms
5
µs
1.1
10
3
91040_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
14
12
10
2
8
6
4
0
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
25
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
50
d(on)
T
C
V
, Case Temperature (°C)
IRF644S, SiHF644S
DS
t
r
75
D.U.T.
100
Vishay Siliconix
R
D
t
d(off)
t
125
f
+
-
www.vishay.com
V
DD
150
5

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