IRF644SPBF Vishay, IRF644SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF644SPBF
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF644SPBF

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91040
S10-2695-Rev. B, 29-Nov-10
SPECIFICATIONS (T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
91040_01
Fig. 1 - Typical Output Characteristics, T
10
10
1
0
10
Top
Bottom
-1
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
J
10
= 25 °C, unless otherwise noted)
0
a
20 µs Pulse Width
T
C
=
10
25 °C
SYMBOL
1
V
I
Q
t
SM
I
t
SD
on
S
rr
rr
C
4.5 V
= 25 °C
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
J
= 25 °C, I
TEST CONDITIONS
F
= 7.9 A, dI/dt = 100 A/μs
S
91040_02
= 14 A, V
Fig. 2 - Typical Output Characteristics, T
10
10
1
0
10
GS
-1
Top
Bottom
G
= 0 V
V
DS ,
b
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
D
S
V
GS
IRF644S, SiHF644S
Drain-to-Source Voltage (V)
b
10
MIN.
0
-
-
-
-
-
Vishay Siliconix
TYP.
250
2.3
20 µs Pulse Width
T
-
-
-
C
=
10
150 °C
1
www.vishay.com
MAX.
500
C
1.8
4.6
S
14
56
and L
4.5 V
= 150 °C
D
UNIT
)
μC
ns
A
V
3