SI4486EY-T1-E3 Vishay, SI4486EY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4486EY-T1-E3
• Description: MOSFET N-CH 100V 5.4A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4486EY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 7.9A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4486EY-T1-E3TR

Si4486EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.5
- 1.0
- 1.5
0.5
0.0
0.01
- 50 - 25
0.1
2
1
10
-4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0
Threshold Voltage
T
25
J
10
- Temperature (°C)
-3
50
Single Pulse
I
75
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
0.001
100
0.01
100
0.1
10
1
0.1
10
125
-2
* V
Limited by R
GS
150
Single Pulse
T
> minimum V
A
= 25 °C
V
175
DS
Square Wave Pulse Duration (s)
Safe Operating Area
DS(on)
- Drain-to-Source Voltage (V)
10
1
-1
*
GS
at which R
10
DS(on)
50
40
30
20
10
0
1
0.01
BVDSS
Limited
is specified
0.1
100
1 ms
10 ms
100 ms
1 s
10 s
DC
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
t
A
1
= P
S09-1341-Rev. E, 13-Jul-09
t
2
Document Number: 71234
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
100
600
600