SI4486EY-T1 Vishay, SI4486EY-T1 Datasheet

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SI4486EY-T1

Manufacturer Part Number
SI4486EY-T1
Description
MOSFET Small Signal 100V 7.9A 3.8W
Manufacturer
Vishay
Datasheet

Specifications of SI4486EY-T1

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.9 A
Power Dissipation
1.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4486EY-T1
Manufacturer:
VISHAY
Quantity:
4
Part Number:
SI4486EY-T1-E3
Manufacturer:
FSC
Quantity:
774
Part Number:
SI4486EY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4486EY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4486EY-T1-E3
Quantity:
70 000
Part Number:
SI4486EY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71234
S09-1341-Rev. E, 13-Jul-09
Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
100
(V)
G
S
S
S
1
2
3
4
Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.028 at V
0.025 at V
Top View
R
SO-8
DS(on)
J
a
= 175 °C)
GS
GS
a
(Ω)
= 6.0 V
= 10 V
N-Channel 100-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
7.9
7.5
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 175 °C Maximum Junction Temperature
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
DM
I
AR
I
thJA
thJF
GS
DS
AR
D
S
D
stg
®
Power MOSFETs
Typical
10 s
7.9
6.1
3.1
3.8
2.3
33
70
17
G
N-Channel MOSFET
- 55 to 175
± 20
100
40
30
45
Steady State
D
S
Maximum
5.4
4.2
1.5
1.8
1.1
40
85
21
Vishay Siliconix
Si4486EY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4486EY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4486EY-T1-E3 (Lead (Pb)-free) Si4486EY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle ≤ Continuous Source Current (Diode Conduction) ...

Page 2

... Si4486EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 175 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71234 S09-1341-Rev. E, 13-Jul- °C J 0.8 1.0 1.2 Si4486EY Vishay Siliconix 3500 3000 C iss 2500 2000 1500 1000 C rss 500 C oss Drain-to-Source Voltage (V) DS Capacitance 2 7 ...

Page 4

... Si4486EY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 175 100 Limited DS(on 0 °C 0.01 A Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71234. Document Number: 71234 S09-1341-Rev. E, 13-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4486EY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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