SIB419DK-T1-GE3 Vishay, SIB419DK-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIB419DK-T1-GE3
• Description: MOSFET P-CH 12V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB419DK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11.82nC @ 5V
• Input Capacitance (ciss) @ Vds: 562pF @ 6V
• Power - Max: 13.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 2450 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 114mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB419DK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
15
12
9
6
3
0
0
25
T
D
C
is based on T
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
16
12
8
4
0
0
25
T
C
50
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB419DK
www.vishay.com
125
150
5