SIB419DK-T1-GE3 Vishay, SIB419DK-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIB419DK-T1-GE3
• Description: MOSFET P-CH 12V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB419DK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11.82nC @ 5V
• Input Capacitance (ciss) @ Vds: 562pF @ 6V
• Power - Max: 13.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 2450 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 114mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB419DK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
0.30
0.24
0.18
0.12
0.06
0.00
On-Resistance vs. Drain Current and Gate Voltage
15
12
5
4
3
2
1
0
9
6
3
0
0.0
0
0
I
D
= 5.2 A
0.6
2
3
V
Output Characteristics
Q
DS
g
V
- Total Gate Charge (nC)
- Drain-to-Source Voltage (V)
GS
I
D
Gate Charge
V
1.2
- Drain Current (A)
= 1.8 V
GS
4
6
= 5 thru 3 V
V
V
DS
V
GS
DS
= 6 V
1.8
= 2.5 V
6
9
= 9.6 V
V
V
V
GS
GS
V
GS
GS
2.4
12
8
= 2 V
= 1.5 V
= 2.5 V
= 4.5 V
New Product
3.0
10
15
1000
800
600
400
200
3.0
2.4
1.8
1.2
0.6
0.0
1.8
1.5
1.2
0.9
0.6
0.3
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
0.4
2
V
V
Transfer Characteristics
C
DS
T
0
GS
oss
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
J
0.8
T
4
= 25 °C
J
Capacitance
25
= 125 °C
C
1.2
iss
50
6
V
I
D
Vishay Siliconix
GS
= 4.4 A
T
= 2.5 V
75
J
1.6
= - 55 °C
V
I
SiB419DK
8
D
GS
= 0.94 A
100
= 1.8 V
www.vishay.com
V
I
D
2.0
GS
10
= 5.2 A
125
= 4.5 V
2.4
150
12
3