SI7112DN-T1-E3 Vishay, SI7112DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7112DN-T1-E3
• Description: MOSFET N-CH 30V 11.3A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7112DN-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.2mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7112DN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72864.
Document Number: 72864
S-60926-Rev. F, 29-May-06
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (sec)
10
-2
10
-1
Vishay Siliconix
Si7112DN
www.vishay.com
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