SI7112DN-T1-E3 Vishay, SI7112DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7112DN-T1-E3
• Description: MOSFET N-CH 30V 11.3A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7112DN-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8.2mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7112DN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72864
S-60926-Rev. F, 29-May-06
0.015
0.012
0.009
0.006
0.003
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
5
DS
On-Resistance vs. Drain Current
0.2
= 17.8 A
12
= 15 V
V
SD
10
T
Q
J
- Source-to-Drain Voltage (V)
= 150 °C
g
I
0.4
D
V
- Total Gate Charge (nC)
GS
- Drain Current (A)
15
Gate Charge
24
= 4.5 V
20
0.6
36
25
0.8
V
GS
30
T
= 10 V
J
48
= 25 °C
1.0
35
40
1.2
60
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3500
3000
2500
2000
1500
1000
1.6
1.4
1.2
1.0
0.8
0.6
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
GS
oss
= 17.8 A
5
= 10 V
V
T
2
GS
V
J
0
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
I
D
- Drain-to-Source Voltage (V)
10
= 17.8 A
25
Capacitance
4
50
Vishay Siliconix
15
C
iss
75
6
Si7112DN
20
C
www.vishay.com
100
rss
8
25
125
150
10
30
3