ZXMN10A09KTC Diodes Zetex, ZXMN10A09KTC Datasheet - Page 5

• Manufacturer Part Number: ZXMN10A09KTC
• Description: MOSFET N-CH 100V 7.7A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A09KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1313pF @ 50V
• Power - Max: 2.15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A09KTR

Typical Characteristics
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
0.1
0.1
10
10
1
1
1
0.1
0.1
Typical Transfer Characteristics
On-Resistance v Drain Current
T = 25°C
T = 25°C
T = 150°C
V
V
DS
3
GS
Output Characteristics
I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
3.5V
10V
1
1
V
4
GS
T = 25°C
4V
V
DS
10
4.5V
5
= 10V
10
5V
4V
5V
4.5V
3.5V
10V
www.diodes.com
V
GS
5 of 8
0.01
Source-Drain Diode Forward Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
Normalised Curves v Temperature
10
1
1
0.1
-50
0.2
T = 150°C
T = 150°C
V
V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
A Product Line of
0.6
1
10V
50
V
I
D
GS
0.8
= 4.6A
= 10V
T = 25°C
100
ZXMN10A09K
V
I
1.0
D
GS
= 250uA
V
= V
10
R
GS(th)
DS(on)
5V
4V
3.5V
4.5V
V
3V
DS
© Diodes Incorporated
GS
150
January 2010
1.2