ZXMN10A09KTC Diodes Zetex, ZXMN10A09KTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A09KTC
• Description: MOSFET N-CH 100V 7.7A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A09KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1313pF @ 50V
• Power - Max: 2.15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A09KTR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
Q
Q
D(on)
D(off)
GS(th)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
100
4 of 8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
0.850
1313
10.7
17.2
26.0
27.5
12.3
Typ
5.6
7.6
6.8
5.3
40
62
83
56
⎯
⎯
⎯
⎯
⎯
0.085
0.100
0.950
±100
Max
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
4
Diodes Incorporated
A Product Line of
Unit
µA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f = 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 250μA, V
= 4.7A, V
= 3.0A, di/dt = 100A/μs
= 250μA, V
= 1.0A, R
= 100V, V
= 15V, I
= 50V, V
= 6V
= 10V
= ±20V, V
= 10V, I
= 6V, I
= 50V, V
Test Condition
ZXMN10A09K
D
GS
G
D
D
= 4.2A
GS
GS
GS
DS
≅ 25Ω
= 4.6A
GS
= 4.6A
DS
= 0V
= 0V
= 10V
= 0V
= V
= 0V
= 0V
V
I
© Diodes Incorporated
D
DS
GS
= 4.6A
January 2010
= 50V,