SI6423DQ-T1-E3 Vishay, SI6423DQ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI6423DQ-T1-E3
• Description: MOSFET P-CH 12V 8.2A 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6423DQ-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 800mV @ 400µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Drain Quad Source
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 8.2 A
• Power Dissipation: 1050 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.5A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI6423DQ-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72257.
Document Number: 72257
S-80682-Rev. B, 31-Mar-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si6423DQ
www.vishay.com
10
5