SI7620DN-T1-GE3 Vishay, SI7620DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7620DN-T1-GE3
• Description: MOSFET N-CH 150V 13A 1212-8
• Manufacturer: Vishay

Specifications of SI7620DN-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 126 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 75V
• Power - Max: 5.2W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Resistance Drain-source Rds (on): 0.103 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.8 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 13A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 126mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7620DN-T1-GE3TR

Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
4.2
3.8
3.4
3.0
2.6
2.2
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
T
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
0.01
I
100
D
0.1
10
T
100
= 250 µA
1
J
0.1
= 25 °C
Limited by R
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
GS
A
= 25 °C
> minimum V
V
150
1.2
DS
1
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
10
0.40
0.32
0.24
0.16
0.08
0.00
DS(on)
50
40
30
20
10
0
100
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
BVDSS
Limited
Single Pulse Power (Junction-to-Ambient)
100 ms
100 µs
1 ms
10 ms
1 s
10 s
DC
0.1
2
V
1000
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S-81215-Rev. A, 02-Jun-08
Document Number: 68702
6
10
I
T
T
D
J
J
= 3.6 A
= 125 °C
= 25 °C
8
100
10
600