SI7620DN-T1-GE3 Vishay, SI7620DN-T1-GE3 Datasheet

MOSFET N-CH 150V 13A 1212-8

SI7620DN-T1-GE3

Manufacturer Part Number
SI7620DN-T1-GE3
Description
MOSFET N-CH 150V 13A 1212-8
Manufacturer
Vishay
Datasheet

Specifications of SI7620DN-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
126 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 75V
Power - Max
5.2W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.103 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.6 A
Power Dissipation
3.8 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
13A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
126mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7620DN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7620DN-T1-GE3
Manufacturer:
Microchip
Quantity:
385
Part Number:
SI7620DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 68702
S-81215-Rev. A, 02-Jun-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
Ordering Information: Si7620DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
150
(V)
8
3.30 mm
D
7
C
D
= 25 °C.
0.126 at V
6
D
PowerPAK
R
Bottom View
http://www.vishay.com/ppg?73257
5
DS(on)
D
GS
J
(Ω)
= 10 V
1
= 150 °C)
b, f
®
S
1212-8
2
N-Channel 150-V (D-S) MOSFET
S
3
S
3.30 mm
I
4
D
G
13
(A)
Steady State
a
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
9.5 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
Typical
1.9
24
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
3.6
2.9
3.2
3.8
Limit
± 20
10.7
2
150
260
5.2
13
15
10
13
33
5
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
2.4
33
Vishay Siliconix
Si7620DN
www.vishay.com
°C/W
Unit
Unit
RoHS
mJ
°C
COMPLIANT
W
V
A
A
1

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SI7620DN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7620DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7620DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge (nC) g Gate Charge Document Number: 68702 S-81215-Rev. A, 02-Jun- thru 2.0 2.5 3 125 Si7620DN Vishay Siliconix ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 3 2.0 ...

Page 4

... Si7620DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.2 3.8 3.4 3.0 2.6 2 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.40 0.32 0.24 0. °C J 0.08 0.00 0.8 1.0 1 250 µA ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68702 S-81215-Rev. A, 02-Jun-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7620DN Vishay Siliconix ...

Page 6

... Si7620DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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