SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet - Page 5

MOSFET N-CH 12V 21.5A 8-SOIC

SI4866BDY-T1-GE3

Manufacturer Part Number
SI4866BDY-T1-GE3
Description
MOSFET N-CH 12V 21.5A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4866BDY-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
21.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Input Capacitance (ciss) @ Vds
5020pF @ 6V
Power - Max
4.45W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0053 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16.1 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
21.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
7.4mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4866BDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
Freescale
Quantity:
255
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
6
5
4
3
2
1
0
0
25
D
Power, Junction-to-Foot
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
25
20
15
10
5
0
0
125
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4866BDY
100
www.vishay.com
125
150
5

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