SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet - Page 4
![MOSFET N-CH 12V 21.5A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4866BDY-T1-GE3
Manufacturer Part Number
SI4866BDY-T1-GE3
Description
MOSFET N-CH 12V 21.5A 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4866BDY-T1-GE3.pdf
(7 pages)
Specifications of SI4866BDY-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
21.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Input Capacitance (ciss) @ Vds
5020pF @ 6V
Power - Max
4.45W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0053 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16.1 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
21.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
7.4mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4866BDY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 500
Company:
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
Freescale
Quantity:
255
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.3
- 0.5
0.01
100
0.3
0.1
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
150 °C
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
25 °C
I
75
D
0.8
= 250 µA
0.01
100
0.1
10
100
0.01
1
Limited by R
I
* V
D
Safe Operating Area, Junction-to-Ambient
1.0
= 5 mA
GS
125
V
minimum V
Single Pulse
0.1
T
DS
150
DS(on)
1.2
A
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
DS(on)
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
1 s
10 s
DC
I
Single Pulse Power, Junction-to-Ambient
D
= 12 A
1
100
V
0.01
GS
- Gate-to-Source Voltage (V)
2
Time (s)
0.1
S09-0540-Rev. B, 06-Apr-09
Document Number: 70341
3
125 °C
25 °C
1
4
10
5