SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4866BDY-T1-GE3
• Description: MOSFET N-CH 12V 21.5A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 21.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5020pF @ 6V
• Power - Max: 4.45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0053 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 21.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 7.4mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4866BDY-T1-GE3TR

Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.3
- 0.5
0.01
100
0.3
0.1
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
150 °C
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
25 °C
I
75
D
0.8
= 250 µA
0.01
100
0.1
10
100
0.01
1
Limited by R
I
* V
D
Safe Operating Area, Junction-to-Ambient
1.0
= 5 mA
GS
125
V
minimum V
Single Pulse
0.1
T
DS
150
DS(on)
1.2
A
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
DS(on)
0.020
0.016
0.012
0.008
0.004
0.000
200
160
120
80
40
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
1 s
10 s
DC
I
Single Pulse Power, Junction-to-Ambient
D
= 12 A
1
100
V
0.01
GS
- Gate-to-Source Voltage (V)
2
Time (s)
0.1
S09-0540-Rev. B, 06-Apr-09
Document Number: 70341
3
125 °C
25 °C
1
4
10
5