ZXMN4A06KTC Diodes Zetex, ZXMN4A06KTC Datasheet - Page 4

MOSFET N-CHAN 40V 10.9A DPAK

ZXMN4A06KTC

Manufacturer Part Number
ZXMN4A06KTC
Description
MOSFET N-CHAN 40V 10.9A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN4A06KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.1nC @ 10V
Input Capacitance (ciss) @ Vds
827pF @ 20V
Power - Max
2.15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN4A06KTC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN4A06KTC
Quantity:
27 500
Electrical characteristics (at T
(*) Measured under pulsed conditions. Width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage V
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(†)
(‡)
(‡)
Symbol
V
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
A
= 25°C unless otherwise stated)
300 s. Duty cycle
Min.
1.0
40
4
Typ.
11.5
23.3
10.9
17.1
2.41
0.83
827
133
3.2
3.8
3.4
84
16
9
2%.
0.050
0.075
Max.
0.95
100
1
Unit
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN4A06K
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
(refer to test circuit)
T
V
T
di/dt= 100A/ s
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=4.5A
=25°C, I
=25°C, I
=6.0 , V
=40V, V
=15V,I
=20 V, V
=20V,V
=±20V, V
=10V, I
=4.5V, I
=0V
=20V, I
www.zetex.com
D
S
F
D
GS
D
GS
=4A,
=4.5A
=4.5A,
D
GS
=4.5A
GS
GS
DS
=1A
=3.2A
DS
=10V,
=10V
=0V
=0V,
= V
=0V
=0V
GS

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