ZXMN4A06KTC Diodes Zetex, ZXMN4A06KTC Datasheet

MOSFET N-CHAN 40V 10.9A DPAK

ZXMN4A06KTC

Manufacturer Part Number
ZXMN4A06KTC
Description
MOSFET N-CHAN 40V 10.9A DPAK
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN4A06KTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.1nC @ 10V
Input Capacitance (ciss) @ Vds
827pF @ 20V
Power - Max
2.15W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN4A06KTC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN4A06KTC
Quantity:
27 500
ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
Applications
Ordering information
Device marking
ZXMN
4A06
Issue 1 - March 2006
© Zetex Semiconductors plc 2005
Device
ZXMN4A06KTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
DC - DC converters
Audio output stages
Relay and solenoid driving
Motor control
= -40V; R
DS(ON)
Reel size
(inches)
= 0.05 ; I
13
D
Tape width
= 10.9A
(mm)
16
1
Quantity
per reel
2,500
Pinout - Top view
www.zetex.com
G
D
S

Related parts for ZXMN4A06KTC

ZXMN4A06KTC Summary of contents

Page 1

... DPAK package Applications • converters • Audio output stages • Relay and solenoid driving • Motor control Ordering information Device Reel size (inches) ZXMN4A06KTC 13 Device marking ZXMN 4A06 Issue 1 - March 2006 © Zetex Semiconductors plc 2005 = 10.9A D Tape width Quantity (mm) per reel 16 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current: (b) V =10V; T =25° (b) V =10V; T =70° (a) V =10V; T =25° (c) Pulsed drain current Continuous source current (body ...

Page 3

Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2005 ZXMN4A06K 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

Page 5

Typical charactersitics Issue 1 - March 2006 © Zetex Semiconductors plc 2005 ZXMN4A06K 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 1 - March 2006 © Zetex Semiconductors plc 2005 ...

Page 7

Issue 1 - March 2006 © Zetex Semiconductors plc 2005 Intentionally left blank 7 ZXMN4A06K www.zetex.com ...

Page 8

Package details - DPAK Package dimensions Dim. Inches Min. Max. A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 ...

Related keywords