ZXMN6A11ZTA Diodes Zetex, ZXMN6A11ZTA Datasheet

MOSFET N-CH 60V 2.4A SOT-89

ZXMN6A11ZTA

Manufacturer Part Number
ZXMN6A11ZTA
Description
MOSFET N-CH 60V 2.4A SOT-89
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A11ZTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5.7nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 40V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN6A11ZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A11ZTA
Manufacturer:
DIODES
Quantity:
10
Part Number:
ZXMN6A11ZTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ZXMN6A11Z
60V SOT89 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
11N6
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
Device
ZXMN6A11ZTA
V
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT89 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
60
0.180 @ V
0.120 @ V
R
DS(on)
GS
GS
Reel size
(inches)
( )
= 4.5V
= 10V
7
I
D
3.6
2.9
Tape width
(A)
(mm)
12
1
Quantity per
1,000
reel
D
www.zetex.com
G
Top view
S
D
D
G
S

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ZXMN6A11ZTA Summary of contents

Page 1

... SOT89 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A11ZTA Device marking 11N6 Issue 2 - September 2006 © Zetex Semiconductors plc 2006 I (A) D 3.6 2.9 Tape width Quantity per (mm) 7 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11Z 3 www.zetex.com ...

Page 4

Electrical characteristics (@ T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11Z 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - September 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 2 - September 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN6A11Z www.zetex.com ...

Page 8

Package outline - SOT89 DIM Millimeters Min Max A 1.40 1.60 B 0.44 0.56 B1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.52 1.83 Note: Controlling dimensions are in millimeters. Approximate dimensions ...

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