SI2319DS-T1-E3 Vishay, SI2319DS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2319DS-T1-E3
• Description: MOSFET P-CH 40V 2.3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2319DS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 82 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2319DS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
0.20
0.16
0.12
0.08
0.04
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0
0
0
V
I
D
DS
V
= 3 A
2
On-Resistance vs. Drain Current
2
GS
= 20 V
2
V
= 4.5 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
4
D
4
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
4
= 10 V thru 5 V
6
6
1 V, 2 V
6
8
8
V
GS
8
= 10 V
10
10
4 V
3 V
10
12
12
800
700
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
0.5
- 25
V
I
rss
D
5
GS
= 3 A
= 10 V
1.0
V
V
10
GS
Transfer Characteristics
DS
T
0
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
1.5
15
25
Capacitance
2.0
T
25 °C
20
50
C
Vishay Siliconix
= 125 °C
C
2.5
iss
25
75
Si2319DS
3.0
- 55 °C
www.vishay.com
100
30
3.5
125
35
4.0
150
4.5
40
3