ZXMN6A07ZTA Diodes Zetex, ZXMN6A07ZTA Datasheet

MOSFET N-CH 60V 1.9A SOT-89

ZXMN6A07ZTA

Manufacturer Part Number
ZXMN6A07ZTA
Description
MOSFET N-CH 60V 1.9A SOT-89
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A07ZTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 10V
Input Capacitance (ciss) @ Vds
166pF @ 40V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN6A07ZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A07ZTA
Manufacturer:
ZETEX
Quantity:
5 000
Part Number:
ZXMN6A07ZTA
Manufacturer:
DIODES
Quantity:
500
Part Number:
ZXMN6A07ZTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ZXMN6A07Z
60V SOT89 N-channel enhancement mode mosfet
Summary
Description
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
Features
Applications
Ordering information
Device marking
7N6
Issue 8 - January 2007
© Zetex Semiconductors plc 2007
Device
ZXMN6A07ZTA
V
Low on-resistance
Fast switching speed
Low threshold
SOT89 package
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
(BR)DSS
60
0.350 @ V
0.250 @ V
R
DS(on)
Reel size
(inches)
GS
GS
( )
7
= 4.5V
= 10V
Tape width
(mm)
12
I
D
2.5
2.1
(A)
1
Quantity per
1,000
reel
D
www.zetex.com
G
Top view
S
D
G
S
D

Related parts for ZXMN6A07ZTA

ZXMN6A07ZTA Summary of contents

Page 1

... Applications • DC-DC converters • Power management functions • Relay and solenoid driving • Motor control Ordering information Device Reel size (inches) ZXMN6A07ZTA 7 Device marking 7N6 Issue 8 - January 2007 © Zetex Semiconductors plc 2007 I (A) D 2.5 2.1 Tape width Quantity per ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Thermal characteristics Issue 8 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A07Z 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

Page 5

Typical characteristics Issue 8 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A07Z 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 8 - January 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - SOT89 DIM Millimeters Min Max A 1.40 1.60 B 0.44 0.56 B1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 Note: Controlling dimensions are in millimeters. Approximate dimensions ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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