ZXMN6A08KTC Diodes Zetex, ZXMN6A08KTC Datasheet - Page 6

• Manufacturer Part Number: ZXMN6A08KTC
• Description: MOSFET N-CH 60V 5.36A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A08KTCTR

Typical Characteristics - continued
Test Circuits
ZXMN6A08K
Document Revision: 2
90%
10%
V
V
GS
DS
V
G
Capacitance v Drain-Source Voltage
600
400
200
Q
0
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
f = 1MHz
GS
V
t
(on)
= 0V
DS
t
1
r
- Drain - Source Voltage (V)
Q
Q
G
GD
C
Charge
ISS
t
d(off)
C
OSS
10
t
(on)
t
C
r
RSS
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6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
I
Switching time test circuit
D
= 1.4A
Gate charge test circuit
1
12V
R
Q - Charge (nC)
Diodes Incorporated
G
2
A Product Line of
V
DS
V
regulator
= 15V
Current
GS
50k
3
I
G
V
GS
4
R
Same as
D.U.T
D
D.U.T
ZXMN6A08K
V
5
DS
© Diodes Incorporated
I
V
D
6
DS
V
July 2009
DD