ZXMN6A08KTC Diodes Zetex, ZXMN6A08KTC Datasheet - Page 3

• Manufacturer Part Number: ZXMN6A08KTC
• Description: MOSFET N-CH 60V 5.36A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A08KTCTR

Thermal Characteristics
ZXMN6A08K
Document Revision: 2
100m
10m
100
60
50
40
30
20
10
10
10
100µ
100µ
0
1
1
Transient Thermal Impedance
R
Limit
D=0.5
D=0.2
25mm x 25mm
DS(on)
25mm x 25mm
T
Pulse Power Dissipation
V
1m
1m
Safe Operating Area
1oz FR4
T
amb
1oz FR4
DC
DS
amb
=25°C
=25°C
1
Drain-Source Voltage (V)
10m 100m
10m 100m
1s
100ms
Pulse Width (s)
Pulse Width (s)
25mm x 25mm
1oz FR4
10ms
1
1
1ms
10
50mm x 50mm
Single Pulse
10
10
Single Pulse
100µs
2oz FR4
T
D=0.05
amb
=25°C
D=0.1
100
100
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1k
1k
3 of 8
100m
10m
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
35
30
25
20
15
10
100µ
1
5
0
Transient Thermal Impedance
0
R
Limit
D=0.5
D=0.2
50mm x 50mm
DS(on)
50mm x 50mm
20
T
Safe Operating Area
1m
V
2oz FR4
amb
T
DS
2oz FR4
amb
=25°C
1
DC
=25°C
40
Temperature (°C)
Drain-Source Voltage (V)
10m 100m
Derating Curve
Diodes Incorporated
Pulse Width (s)
1s
100ms
60
A Product Line of
80
10ms
50mm x 50mm
100 120 140 160
1ms
1
2oz FR4
10
25mm x 25mm
Single Pulse
100µs
1oz FR4
10
D=0.05
D=0.1
100
ZXMN6A08K
© Diodes Incorporated
1k
July 2009