SI2302ADS-T1-E3 Vishay, SI2302ADS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2302ADS-T1-E3
• Description: MOSFET N-CH 20V 2.1A SOT23-3
• Manufacturer: Vishay

Specifications of SI2302ADS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 85mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2302ADS-T1-E3TR

Si2302ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.001
- 0.2
- 0.3
- 0.4
- 0.5
0.10
0.01
- 0.1
0.01
100
0.3
0.2
0.1
0.0
0.1
10
1
2
1
- 50
10
0.0
-4
www.vishay.com/ppg?71831.
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.2
V
T
A
SD
0
= 150 °C
Threshold Voltage
- Source-to-Drain Voltage (V)
T
10
0.4
J
- Temperature (°C)
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.6
I
D
= 250 µA
T
A
0.8
A
= 25 °C
10
= 25 °C, unless otherwise noted
100
-2
1.0
Square Wave Pulse Duration (s)
150
1.2
10
-1
0.20
0.16
0.12
0.08
0.04
0.00
1
10
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS
10
2
- Gate-to-Source Voltage (V)
Single Pulse Power
1.0
Single Pulse
T
Time (s)
C
= 25 °C
4
S10-0047-Rev. I, 11-Jan-10
Document Number: 71831
100
10
I
D
= 3.6 A
6
100
600
1000
8