SI2302ADS-T1-E3 Vishay, SI2302ADS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2302ADS-T1-E3
• Description: MOSFET N-CH 20V 2.1A SOT23-3
• Manufacturer: Vishay

Specifications of SI2302ADS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 85mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2302ADS-T1-E3TR

Si2302ADS
Vishay Siliconix
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Effective for production 10/04.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
a
a
a
A
= 25 °C, unless otherwise noted
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
D(on)
DS(on)
V
C
GS(th)
Q
Q
C
d(on)
d(off)
GSS
DSS
g
Q
oss
t
SD
t
iss
rss
gd
fs
gs
r
f
g
V
I
V
V
D
DS
DS
DS
≅ 3.6 A, V
= 10 V, V
= 20 V, V
= 10 V, V
V
V
V
V
V
V
V
V
I
V
S
V
DS
DD
DS
DS
DS
GS
GS
DS
GS
DS
= 0.94 A, V
Test Conditions
= 0 V, V
= V
≥ 5 V, V
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 20 V, V
= 0 V, I
= 5 V, I
GEN
GS
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
= 0 V, f = 1 MHz
D
GS
GS
GS
D
D
D
D
GS
GS
L
= 10 µA
= 3.6 A
= 50 µA
= 4.5 V
= 2.5 V
= 3.6 A
= 3.1 A
= 2.8 Ω
= ± 8 V
= 0 V
= 0 V
J
D
= 55 °C
g
= 3.6 A
= 6 Ω
Min.
0.65
20
6
4
0.045
0.070
Typ.
0.95
0.76
0.65
300
120
4.0
1.5
80
55
16
10
8
7
S10-0047-Rev. I, 11-Jan-10
Document Number: 71831
0.060
± 100
0.115
Max.
1.2
0.1
2.0
1.2
10
15
80
60
25
b
Unit
nA
µA
nC
pF
ns
V
A
Ω
S
V