SI1470DH-T1-E3 Vishay, SI1470DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1470DH-T1-E3
• Description: MOSFET N-CH 30V 5.1A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1470DH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 1.6V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 510pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.066 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 95mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1470DH-T1-E3TR

TYPICAL CHARACTERISTICS T
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
0.15
0.12
0.09
0.06
0.03
12
5
4
3
2
1
0
9
6
3
0
0
0.0
0
0
I
D
= 3.7 A
On-Resistance vs. Drain Current
0.5
V
DS
Output Characteristics
3
Q
g
- Drain-to-Source Voltage (V)
I
V
- Total Gate Charge (nC)
D
2
GS
Gate Charge
- Drain Current (A)
1.0
V
= 2.5 V
GS
= 5 V thru 3 V
6
V
DS
1.5
= 15 V
A
V
V
V
4
GS
GS
V
GS
= 25 °C, unless otherwise noted
GS
= 4.5 V
= 2 V
V
= 1.5 V
9
DS
= 2.5 V
2.0
= 24 V
2.5
12
6
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
Transfer Characteristics Curves vs. Temperature
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
0.5
6
V
V
DS
GS
T
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
T
Capacitance
1.0
12
T
C
C
V
= 25 °C
I
D
= 125 °C
GS
50
= 3.7 A, 4.1 A
C
Vishay Siliconix
iss
= 4.5 V
1.5
18
75
Si1470DH
www.vishay.com
100
T
V
C
I
D
GS
2.0
24
= - 55 °C
= 3.1 A
= 2.5 V
125
150
2.5
30
3