SI1470DH-T1-E3 Vishay, SI1470DH-T1-E3 Datasheet
SI1470DH-T1-E3
Specifications of SI1470DH-T1-E3
Available stocks
Related parts for SI1470DH-T1-E3
SI1470DH-T1-E3 Summary of contents
Page 1
... SOT-363 SC-70 (6-LEADS Top Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free) Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current a Maximum Power Dissipation ...
Page 2
... Si1470DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
Page 3
... Gate Charge Document Number: 74277 S10-0646-Rev. B, 22-Mar- °C, unless otherwise noted 2 1 1.5 2 Si1470DH Vishay Siliconix 3.0 2.5 2.0 1 125 ° ° 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temperature 800 600 C iss 400 ...
Page 4
... Si1470DH Vishay Siliconix TYPICAL CHARACTERISTICS 150 ° 0.1 0.01 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.5 1.3 1.1 0.9 0.7 0 Temperature (°C) J Threshold Voltage 0.001 www.vishay.com °C, unless otherwise noted °C J 0.8 1.0 1 250 µ 100 125 150 ...
Page 5
... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74277 S10-0646-Rev. B, 22-Mar- °C, unless otherwise noted A 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1470DH Vishay Siliconix 3.6 3.0 2.4 1.8 1.2 0.6 0 ...
Page 6
... Si1470DH Vishay Siliconix TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 7
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...