SI2306BDS-T1-E3 Vishay, SI2306BDS-T1-E3 Datasheet

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SI2306BDS-T1-E3

Manufacturer Part Number
SI2306BDS-T1-E3
Description
MOSFET N-CH 30V 3.16A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2306BDS-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 5V
Input Capacitance (ciss) @ Vds
305pF @ 15V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.047 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.16 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3.16A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
94mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2306BDS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2306BDS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
119 368
Part Number:
SI2306BDS-T1-E3
Manufacturer:
AD
Quantity:
250
Part Number:
SI2306BDS-T1-E3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI2306BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2306BDS-T1-E3
Quantity:
12 000
Company:
Part Number:
SI2306BDS-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
0.065 at V
0.047 at V
R
DS(on)
GS
GS
(Ω)
J
a, b
= 4.5 V
= 10 V
= 150 °C)
a
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
N-Channel 30-V (D-S) MOSFET
a, b
I
G
S
D
4.0
3.5
(A)
a, b
1
2
Si2306BDS (L6 )*
* Marking Code
A
(SOT-23)
Top View
Q
TO-236
= 25 °C, unless otherwise noted
Steady State
Steady State
g
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
3.0
(Typ.)
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
D
FEATURES
• Halogen-free Option Available
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
1.04
1.25
130
5 s
4.0
3.5
0.8
80
60
- 55 to 150
± 20
30
20
Steady State
Maximum
3.16
0.62
0.75
0.48
100
166
2.7
75
Vishay Siliconix
Si2306BDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2306BDS-T1-E3 Summary of contents

Page 1

... V (V) R (Ω) DS DS(on) 0.047 0.065 4 Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2306BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73234 S-80642-Rev. B, 24-Mar-08 400 350 300 250 200 150 100 °C J 0.8 1.0 1.2 Si2306BDS Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 3 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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