ZXMP6A17E6TA Diodes Zetex, ZXMP6A17E6TA Datasheet - Page 5

• Manufacturer Part Number: ZXMP6A17E6TA
• Description: MOSFET P-CH 60V 3A SOT-23-6
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMP6A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 637pF @ 30V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.125Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.92W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-23
• Continuous Drain Current: 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A17E6TR

Typical Characteristics
ZXMP6A17E6
Document Number: DS33589 Rev. 2 - 2
0.01
0.01
100
Typical Transfer Characteristics
0.1
0.1
0.1
10
10
10
1
1
On-Resistance v Drain Current
1
0.1
1
T = 25°C
2V
T = 25°C
0.1
-V
-V
T = 150°C
Output Characteristics
DS
GS
-I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
2
1
2.5V
1
T = 25°C
10V
3V
3
3.5V
5V
-V
DS
10
-V
10
4V
= 10V
GS
4V
3.5V
2.5V
3V
-V
10V
2V
5V
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GS
4
5 of 8
0.01
0.01
Normalised Curves v Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-50
0.2
T = 150°C
0.1
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
0.4
T = 150°C
Diodes Incorporated
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
A Product Line of
V
I
D
GS
0.6
= -250uA
= V
1
50
DS
10V
T = 25°C
0.8
V
I
D
GS
= - 2.3A
= -10V
100
5V
ZXMP6A17E6
10
1.0
V
4.5V
V
GS
3.5V
3V
R
GS(th)
2V
1.5V
= 0V
2.5V
DS(on)
-V
© Diodes Incorporated
December 2010
GS
150
1.2