ZXMP6A17E6TA Diodes Zetex, ZXMP6A17E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXMP6A17E6TA
• Description: MOSFET P-CH 60V 3A SOT-23-6
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMP6A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 637pF @ 30V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.125Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.92W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-23
• Continuous Drain Current: 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A17E6TR

Thermal Characteristics
ZXMP6A17E6
Document Number: DS33589 Rev. 2 - 2
P-channel Safe Operating Area
100m
10m
Transient Thermal Impedance
100
10
80
60
40
20
100µ
1
0
R
Limited
D=0.5
Single Pulse, T
D=0.2
DS(ON)
-V
DC
1m
DS
1s
100ms
Drain-Source Voltage (V)
10m 100m
1
Pulse Width (s)
amb
10ms
=25°C
1ms
1
100us
D=0.1
10
D=0.05
Single Pulse
10
10us
100
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100
1k
3 of 8
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
Pulse Power Dissipation
1m
25
Derating Curve
10m 100m
Diodes Incorporated
Temperature (°C)
50
Pulse Width (s)
A Product Line of
75
1
100
Single Pulse
T
amb
10
125
=25°C
ZXMP6A17E6
100
150
© Diodes Incorporated
December 2010
1k