DMN4009LK3-13 Diodes Zetex, DMN4009LK3-13 Datasheet - Page 5

• Manufacturer Part Number: DMN4009LK3-13
• Description: MOSFET N-CH 40V 18A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN4009LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2072pF @ 20V
• Power - Max: 2.19W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN4009LK3-13DITR

Typical Characteristics
DMN4009LK3
Document Revision: 1
1E-3
0.01
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
T = 25°C
V
0.1
DS
V
V
1
= 10V
DS
T = 150°C
GS
Output Characteristics
10V
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
2.5V
4V
2
1
1
3V
T = 25°C
3
10
3.5V
3.5V
T = 25°C
10
3V
4V
www.diodes.com
V
2.5V
10V
V
GS
GS
4
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
10V
Diodes Incorporated
A Product Line of
V
I
D
3.5V
GS
= 250uA
1
0.6
= V
V
I
50
D
GS
= 14A
DS
= 10V
T = 25°C
Vgs = 0V
100
0.8
3V
T = 150°C
10
R
DS(on)
V
2.5V
2V
V
1.5V
GS(th)
DMN4009LK3
GS
150
1.0
© Diodes Incorporated
July 2009