DMN4009LK3-13 Diodes Zetex, DMN4009LK3-13 Datasheet - Page 3

• Manufacturer Part Number: DMN4009LK3-13
• Description: MOSFET N-CH 40V 18A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN4009LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2072pF @ 20V
• Power - Max: 2.19W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN4009LK3-13DITR

Thermal Characteristics
DMN4009LK3
Document Revision: 1
100m
10m
100
100
60
50
40
30
20
10
10
10
100m
100µ
100µ
1
0
1
Transient Thermal Impedance
R
Limited
25mm x 25mm
D=0.5
D=0.2
DS(on)
25mm x 25mm
T
DC
Pulse Power Dissipation
1oz FR4
V
1m
1m
amb
Safe Operating Area
T
1oz FR4
DS
amb
=25°C
1s
=25°C
Drain-Source Voltage (V)
10m 100m
10m 100m
100ms
Pulse Width (s)
Pulse Width (s)
25mm x 25mm
1
1oz FR4
10ms
1
1
1ms
50mm x 50mm
100µs
Single Pulse
10
10
Single Pulse
2oz FR4
T
10
D=0.05
amb
=25°C
D=0.1
100
100
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1k
1k
3 of 8
100m
10m
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
30
25
20
15
10
100µ
1
5
0
0.1
Transient Thermal Impedance
0
R
Limited
50mm x 50mm
D=0.5
DS(on)
D=0.2
T
50mm x 50mm
20
Safe Operating Area
2oz FR4
1m
amb
V
DC
T
DS
2oz FR4
=25°C
amb
=25°C
40
Temperature (°C)
1s
Drain-Source Voltage (V)
10m 100m
Derating Curve
Pulse Width (s)
100ms
60
Diodes Incorporated
1
A Product Line of
80
10ms
50mm x 50mm
100 120 140 160
1
1ms
2oz FR4
25mm x 25mm
Single Pulse
100µs
1oz FR4
10
D=0.05
10
D=0.1
100
DMN4009LK3
1k
© Diodes Incorporated
July 2009