DMP2012SN-7 Diodes Zetex, DMP2012SN-7 Datasheet - Page 2

• Manufacturer Part Number: DMP2012SN-7
• Description: MOSFET P-CH 20V 700MA SC59-3
• Manufacturer: Diodes Zetex

Specifications of DMP2012SN-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMP2012SNDITR

DMP2012SN
Document number: DS30790 Rev. 3 - 2
2.5
1.5
0.5
0.8
0.6
0.4
0.2
0.2
0.8
0.6
0.4
3
2
1
0
0
0
0
-50
0
-4V
V
Fig. 5 On-Resistance Variation with Temperature
V
-4.5V
GS
GS
= -2.5V
-V , DRAIN-SOURCE VOLTAGE (V)
= -4.5V
0.5
Fig. 1 Typical Output Characteristics
-5V
Fig. 3 On-Resistance vs. Gate Voltage
DS
-V
T , AMBIENT TEMPERATURE (°C)
2
GS
A
-3V
0
, GATE-SOURCE VOLTAGE (V)
1
-3.5V
4
1.5
-2.5V
50
I = -0.7A
D
6
I = -0.7A
D
2
V
I = 1.0A
I = 0.5A
D
-0.4A
GS
D
= -1.5V
-2V
100
T = 25°C
A
2.5
8
3
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2.5
1.5
0.5
1.4
1.2
0.8
0.6
0.4
0.2
3
2
1
0
0.1
1
0
-50
0
1
0
Fig. 6 Gate Threshold Voltage vs. Temperature
V
DS
Fig. 2 Typical Transfer Characteristics
T = 25°C
0.5
Fig. 4 On-Resistance vs. Drain Current
J
T , AMBIENT TEMPERATURE (°C)
= 10V
0.5
A
-V
0
GS
T = 125°C
-I , DRAIN CURRENT (A)
J
, Gate-Source Voltage(V)
D
1
T = 25°C
1
J
V
GS
= -4.5V
1.5
50
1.5
T = -55°C
V
J
GS
= -10V
2
V
I = 1mA
D
2
DS
100
DMP2012SN
= 10V
2.5
2.5
© Diodes Incorporated
November 2007
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