Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Features
•
•
•
•
•
•
•
•
Notes:
DMP2012SN
Document number: DS30790 Rev. 3 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
ESD protected
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
TOP VIEW
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
SC-59
Symbol
R
1 of 4
BV
V
t
DS (ON)
t
D(OFF)
I
I
C
|Y
V
C
D(ON)
GS(th)
C
DSS
GSS
oss
SD
rss
t
t
DSS
iss
fs
r
f
Mechanical Data
|
•
•
•
•
•
•
•
•
Symbol
Symbol
T
Gate
j
V
V
R
, T
I
P
DSS
GSS
DM
I
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
θ JA
D
Equivalent Circuit
d
Gate
Protection
Diode
STG
Min
-0.5
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Drain
Source
0.23
0.37
Typ
-0.8
180
120
1.5
⎯
⎯
⎯
⎯
50
55
20
70
5
-65 to +150
Max
0.30
0.50
-1.2
-1.1
±10
-10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Value
Value
±12
-0.7
-2.8
500
250
-20
G
TOP VIEW
Unit
μA
μA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
V
D
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
GS
DS
GS
DS
GS
GS
DS
GS
DS
DD
GS
S
= -20V, V
= V
= ±12V, V
= -2.5V, I
= -10V, I
= 0V, I
= -10V, V
= -5.0V, R
= 0V, I
= -4.5V, I
= -10V, I
DMP2012SN
Test Condition
GS
, I
© Diodes Incorporated
D
S
November 2007
°C/W
D
Unit
Unit
mW
= -0.7A
= 250mA
D
D
°C
D
V
V
A
A
GS
= -250μA
D
GS
DS
GEN
= 0.4A
= -0.4A,
= -0.4A
= -0.4A
= 0V
= 0V
= 0V
= 50Ω