DMP2012SN-7 Diodes Zetex, DMP2012SN-7 Datasheet
DMP2012SN-7
Manufacturer Part Number
DMP2012SN-7
Description
MOSFET P-CH 20V 700MA SC59-3
Manufacturer
Diodes Zetex
Datasheet
1.DMP2012SN-7.pdf
(4 pages)
Specifications of DMP2012SN-7
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 400mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Input Capacitance (ciss) @ Vds
180pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
DMP2012SNDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMP2012SN-7
Manufacturer:
DIODES
Quantity:
39 000
Part Number:
DMP2012SN-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
DMP2012SN-7-F
Manufacturer:
DIODES
Quantity:
9 500
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Features
•
•
•
•
•
•
•
•
Notes:
DMP2012SN
Document number: DS30790 Rev. 3 - 2
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
ESD protected
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
TOP VIEW
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
www.diodes.com
SC-59
Symbol
R
1 of 4
BV
V
t
DS (ON)
t
D(OFF)
I
I
C
|Y
V
C
D(ON)
GS(th)
C
DSS
GSS
oss
SD
rss
t
t
DSS
iss
fs
r
f
Mechanical Data
|
•
•
•
•
•
•
•
•
Symbol
Symbol
T
Gate
j
V
V
R
, T
I
P
DSS
GSS
DM
I
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
θ JA
D
Equivalent Circuit
d
Gate
Protection
Diode
STG
Min
-0.5
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Drain
Source
0.23
0.37
Typ
-0.8
180
120
1.5
⎯
⎯
⎯
⎯
50
55
20
70
5
-65 to +150
Max
0.30
0.50
-1.2
-1.1
±10
-10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Value
Value
±12
-0.7
-2.8
500
250
-20
G
TOP VIEW
Unit
μA
μA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
V
D
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
GS
DS
GS
DS
GS
GS
DS
GS
DS
DD
GS
S
= -20V, V
= V
= ±12V, V
= -2.5V, I
= -10V, I
= 0V, I
= -10V, V
= -5.0V, R
= 0V, I
= -4.5V, I
= -10V, I
DMP2012SN
Test Condition
GS
, I
© Diodes Incorporated
D
S
November 2007
°C/W
D
Unit
Unit
mW
= -0.7A
= 250mA
D
D
°C
D
V
V
A
A
GS
= -250μA
D
GS
DS
GEN
= 0.4A
= -0.4A,
= -0.4A
= -0.4A
= 0V
= 0V
= 0V
= 50Ω
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DMP2012SN-7 Summary of contents
Page 1
... V SD ⎯ C iss ⎯ C oss ⎯ C rss ⎯ t D(ON) ⎯ t D(OFF) ⎯ ⎯ www.diodes.com DMP2012SN Drain Source TOP VIEW Value Unit -20 V ±12 V -0.7 A -2.8 A Value Unit 500 mW °C/W 250 °C -65 to +150 Typ Max Unit Test Condition ⎯ ⎯ ...
Page 2
... V = - 1. 1.4 1.2 1 0.8 -0.4A 0 -0.7A D 0.4 0.2 0 100 150 - www.diodes.com DMP2012SN V = 10V 25° 125° -55°C J 0.5 1 1 Gate-Source Voltage(V) GS Fig. 2 Typical Transfer Characteristics T = 25° -4. -10V GS 0.5 1 1 DRAIN CURRENT (A) D Fig. 4 On-Resistance vs. Drain Current ...
Page 3
... V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 6) Part Number DMP2012SN-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Package Outline Dimensions ...
Page 4
... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2012SN Document number: DS30790 Rev Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMP2012SN Z 4.0 G 1.2 X 0.9 Y 1 ...