SI1305DL-T1-E3 Vishay, SI1305DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1305DL-T1-E3
• Description: MOSFET P-CH 8V 860MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1305DL-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -920mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1305DL-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71076
S10-0110-Rev. F, 18-Jan-10
0.001
0.01
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
8
6
4
2
0
1
V
0.0
0
GS
0
= 1.8 V
V
I
D
Source-Drain Diode Forward Voltage
DS
= 1 A
1
On-Resistance vs. Drain Current
0.2
= 4 V
V
SD
1
Q
2
- Source-to-Drain Voltage (V)
g -
I
0.4
D
- Drain Current (A)
Total Gate Charge (nC)
Gate Charge
T
3
J
= 150 °C
0.6
2
T
J
= 25 °C
4
V
GS
0.8
V
= 2.5 V
GS
5
3
= 4.5 V
1.0
6
1.2
7
4
350
300
250
200
150
100
1.0
0.8
0.6
0.4
0.2
0.0
50
1.6
1.2
0.8
0.4
0.0
0
0.0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.5
V
I
- 25
D
GS
= 1 A
= 4.5 V
1.0
V
T
V
2
0
DS
J
GS
C
- Junction Temperature (°C)
rss
- Drain-to-Source Voltage (V)
1.5
- Gate-to-Source Voltage (V)
Capacitance
25
C
C
2.0
iss
oss
I
D
= 1 A
4
50
Vishay Siliconix
2.5
75
Si1305DL
3.0
www.vishay.com
100
6
3.5
125
4.0
4.5
150
8
3